RA18H1213G Description
The RA18H1213G is a 18-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 1.24- to 1.30-GHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB.
RA18H1213G Key Features
- Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
- Pout>18W, ηT>20% @ VDD=12.5V, VGG=5V, Pin=200mW
- Broadband Frequency Range: 1.24-1.30GHz
- Low-Power Control Current IGG=1mA (typ) at VGG=5V
- Module Size: 66 x 21 x 9.88 mm
- Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output pow
- Frequency Range Output Power Total Efficiency 2
- 30 3:1 1
- mA dB -20 -25 No parasitic oscillation No degradation or destroy dBc dBc