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RD02MUS2 - RoHS Compliance

General Description

RD02MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.

This device have an interal monolithic zener diode from gate to source for ESD protection.

Key Features

  • High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz,520MHz.
  • High Efficiency:65%typ. (175MHz).
  • High Efficiency:65%typ. (520MHz).
  • Integrated gate protection diode 3 (0.25) INDEX MARK (Gate) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm.

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Full PDF Text Transcription for RD02MUS2 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for RD02MUS2. For precise diagrams, and layout, please refer to the original PDF.

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS2 0.2+/-0.05 (0.22) (0.22) (0.25) RoHS Compliance,Silicon MOSFET Power Tran...

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+/-0.05 (0.22) (0.22) (0.25) RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DESCRIPTION RD02MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications. This device have an interal monolithic zener diode from gate to source for ESD protection. OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 6.0+/-0.15 1 4.9+/-0.15 1.0+/-0.05 2 FEATURES •High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz,520MHz •High Efficiency:65%typ.(175MHz) •High Efficiency:65%typ.(520MHz) •Integrated gate protection diode 3 (0.25) INDEX MARK (Gate) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain

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