RD05MMP1 fet equivalent, silicon rf power mos fet.
*High power gain: Pout>5.5W, Gp>8.9dB@Vdd=7.2V,f=941MHz
*High Efficiency: 43%min. (941MHz)
*No gate protection diode
INDEX MARK [Gate]
(4.5)
0.95+/-0.2
2.6.
(3.6)
OUTLINE DRAWING
(d)
FEATURES
*High power gain: Pout>5.5W, Gp>8.9dB@Vdd=7.2V,f=941MHz
*High Efficiency:.
RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.
(3.6)
OUTLINE DRAWING
(d)
FEATURES
*High power gain: Pout>5.5W, Gp>8.9dB@Vdd=7.2V,f=941MHz
*High Efficiency: 43%min. (941MHz)
*No gat.
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