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RD05MMP1 - Silicon RF Power MOS FET

General Description

RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.

Key Features

  • High power gain: Pout>5.5W, Gp>8.9dB@Vdd=7.2V,f=941MHz.
  • High Efficiency: 43%min. (941MHz).
  • No gate protection diode INDEX MARK [Gate] (4.5) 0.95+/-0.2 2.6+/-0.2 TOP VIEW DETAIL A SIDE VIEW 1.8+/-0.1 BOTTOM VIEW Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate [input] (d)Source.

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Full PDF Text Transcription for RD05MMP1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for RD05MMP1. For precise diagrams, and layout, please refer to the original PDF.

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD05MMP1 (a) 0.2+/-0.05 0.65+/-0.2 (c) (b) 7.0+/-0.2 (b) 8.0+/-0.2 6.2+/-0.2 4.2+/...

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0.2+/-0.05 0.65+/-0.2 (c) (b) 7.0+/-0.2 (b) 8.0+/-0.2 6.2+/-0.2 4.2+/-0.2 5.6+/-0.2 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W DESCRIPTION RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications. (3.6) OUTLINE DRAWING (d) FEATURES •High power gain: Pout>5.5W, Gp>8.9dB@Vdd=7.2V,f=941MHz •High Efficiency: 43%min. (941MHz) •No gate protection diode INDEX MARK [Gate] (4.5) 0.95+/-0.2 2.6+/-0.2 TOP VIEW DETAIL A SIDE VIEW 1.8+/-0.1 BOTTOM VIEW Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate [input] (d)Source APPLICATION For output stage of high power ampli

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