RD06HHF1 datasheet, fet equivalent, Mitsubishi Electric

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RD06HHF1 Features and benefits

2 For output stage of high power amplifiers in HF band mobile radio sets. 12.3MIN APPLICATION 1.2+/-0.4 0.8+0.10/-0.15 1 2 3 0.5+0.10/-0.15 2.5 2.5 3.1+/-0.6 4.5+/-.

RD06HHF1 Application

OUTLINE DRAWING 3.2+/-0.4 4.8MAX 9+/-0.4
*High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz 12.3+/-0.6 FEAT.

RD06HHF1 Description

RD06HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. OUTLINE DRAWING 3.2+/-0.4 4.8MAX 9+/-0.4
*High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz 12.3+/-0.6 FEATURES 2 For output stage of h.

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