RD06HHF1 Description
RD06HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. OUTLINE DRAWING 3.2+/-0.4 4.8MAX 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz 12.3+/-0.6.
- Part: RD06HHF1
- Manufacturer: Mitsubishi Electric
- Size: 571.80 KB
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