Datasheet4U Logo Datasheet4U.com

RD06HHF1 - Silicon RF Power MOS FET

General Description

RD06HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.

High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz 12.3+/-0.6

Key Features

  • 2 For output stage of high power amplifiers in HF band mobile radio sets. 12.3MIN.

📥 Download Datasheet

Full PDF Text Transcription for RD06HHF1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for RD06HHF1. For precise diagrams, and layout, please refer to the original PDF.

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HHF1 9.1+/-0.7 1.3+/-0.4 3.6+/-0.2 Silicon MOSFET Power Transistor 30MHz,6W DE...

View more extracted text
+/-0.7 1.3+/-0.4 3.6+/-0.2 Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION RD06HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. OUTLINE DRAWING 3.2+/-0.4 4.8MAX 9+/-0.4 •High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz 12.3+/-0.6 FEATURES 2 For output stage of high power amplifiers in HF band mobile radio sets. 12.3MIN APPLICATION 1.2+/-0.4 0.8+0.10/-0.15 1 2 3 0.5+0.10/-0.15 2.5 2.5 3.1+/-0.6 4.5+/-0.5 5deg PIN 1.Gate 2.Source 3.Drain UNIT:mm 9.5MAX ABSOLUTE MAXIMUM RATINGS www.DataSheet4U.

More Datasheets from Mitsubishi Electric

Part Number Description
RD00HHS1 RoHS Compliance
RD00HVS1 RoHS Compliance
RD01MUS1 Silicon RF Power MOS FET
RD01MUS2 Silicon MOSFET Power Transistor
RD02MUS1 Silicon MOSFET Power Transistor
RD02MUS2 RoHS Compliance
RD05MMP1 Silicon RF Power MOS FET
RD07MVS1 Silicon MOSFET Power Transistor
RD09MUP2 Silicon MOSFET Power Transistor