RD12MVP1 datasheet, transistor equivalent, Mitsubishi Electric

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Features and benefits

*High Power Gain Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz
*High Efficiency: 55%min. (175MHz)
*No gate protection diode INDEX MARK [Gate] (3.6) (4.5) 0.95+/-0.2 .

Application

OUTLINE DRAWING FEATURES
*High Power Gain Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz
*High Efficiency: 55%min. (175MH.

Description

RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. OUTLINE DRAWING FEATURES
*High Power Gain Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz
*High Efficiency: 55%min. (175MHz)
*No gate protection di.

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