Datasheet4U Logo Datasheet4U.com

RD12MVS1 - Silicon RF Power MOS FET

Description

RD12MVS1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

Features

  • High Power Gain: Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz High Efficiency: 57%typ. (175MHz).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RD12M ZENER DIODES 200 mW 3-PIN MINI MOLD NEC
RD12MW ZENER DIODES 200 mW 3-PIN MINI MOLD NEC
RD120E 500 mW DHD ZENER DIODE DO-35 NEC
RD120E 500mW PLANAR TYPE SILICON ZENER DIODES Renesas
RD120EB ZENER DIODES SEMTECH

Other Datasheets by Mitsubishi Electric

Part Number Description
RD12MVP1 Silicon MOSFET Power Transistor
RD16HHF1 Silicon MOSFET Power Transistor

Full PDF Text Transcription

Click to expand full text
< Silicon RF Power MOS FET (Discrete) > RD12MVS1 RoHS Compliant, Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION RD12MVS1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. OUTLINE DRAWING FEATURES High Power Gain: Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz High Efficiency: 57%typ. (175MHz) APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMPLIANT RD12MVS1 is EU RoHS compliant product. RoHS compliant product is indicating by the letter “ZG” after the Lot Marking.
Published: |