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MGF4934BM Datasheet, Mitsubishi Electric Semiconductor

MGF4934BM hemt equivalent, super low noise ingaas hemt.

MGF4934BM Avg. rating / M : 1.0 rating-11

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MGF4934BM Datasheet

Features and benefits

Low noise figure @ f=12GHz NFmin. = 0.50dB (Typ.) High associated gain @ f=12GHz Gs = 12.5dB (Typ.) Fig.1 MITSUBISHI Proprietary APPLICATION S to Ku band low noise ampl.

Application

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Description

The MGF4934BM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance. Outline Drawing FEATURES Low noise figure @ f=12.

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TAGS

MGF4934BM
SUPER
LOW
NOISE
InGaAs
HEMT
MGF4934AM
MGF4934CM
MGF4931AM
Mitsubishi Electric Semiconductor

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