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MGF4936AM - SUPER LOW NOISE InGaAs HEMT

General Description

The MGF4936AM super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers.

The 4pin flat lead package is small-thin size, and offers high cost performance.

Key Features

  • Low noise figure @ f=12GHz NFmin. = 0.50dB (Typ. ) High associated gain @ f=12GHz Gs = 12.0dB (Typ. ) Fig.1.

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< Low Noise GaAs HEMT > MGF4936AM 4pin flat lead package DESCRIPTION The MGF4936AM super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance. Outline Drawing FEATURES Low noise figure @ f=12GHz NFmin. = 0.50dB (Typ.) High associated gain @ f=12GHz Gs = 12.0dB (Typ.) Fig.1 APPLICATION S to Ku band low noise amplifiers QUALITY GRADE GG MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED BIAS CONDITIONS VDS=2V , ID=7mA ORDERING INFORMATION General part number: MGF4936AM-75 Tape & reel 15000pcs/reel www.DataSheet.net/ RoHS COMPLIANT MGF4936AM is a RoHS compliant product.