• Part: MGF4936AM
  • Description: SUPER LOW NOISE InGaAs HEMT
  • Manufacturer: Mitsubishi Electric
  • Size: 247.43 KB
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Datasheet Summary

< Low Noise GaAs HEMT > 4pin flat lead package DESCRIPTION The MGF4936AM super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance. Outline Drawing Features Low noise figure @ f=12GHz NFmin. = 0.50dB (Typ.) High associated gain @ f=12GHz Gs = 12.0dB (Typ.) Fig.1 APPLICATION S to Ku band low noise amplifiers QUALITY GRADE MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric REMENDED BIAS CONDITIONS VDS=2V , ID=7mA ORDERING INFORMATION General part number: MGF4936AM-75 Tape & reel...