MGF4936AM - SUPER LOW NOISE InGaAs HEMT

Product Overview

Mitsubishi Electric Semiconductor

Part number	MGF4936AM
Manufacturer	Mitsubishi Electric Semiconductor
File Size	247.43 KB
Description	SUPER LOW NOISE InGaAs HEMT
Datasheet	MGF4936AM Datasheet
Additional preview pages of the MGF4936AM datasheet.

The MGF4936AM super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers.

Low noise figure @ f=12GHz NFmin. = 0.50dB (Typ. ) High associated gain @ f=12GHz Gs = 12.0dB (Typ. ) Fig.1.

📁 Similar Datasheet

MGF4910D - (MGF4910D Series) Tape Carrier Super Low Noise InGaAs HEMT (Mitsubishi Electric)
MGF4910E - (MGF4910E Series) Super Low Noise InGaAs HEMT (Mitsubishi Electric)
MGF4914D - (MGF4910D Series) Tape Carrier Super Low Noise InGaAs HEMT (Mitsubishi Electric)
MGF4914E - (MGF4910E Series) Super Low Noise InGaAs HEMT (Mitsubishi Electric)
MGF4916D - (MGF4910D Series) Tape Carrier Super Low Noise InGaAs HEMT (Mitsubishi Electric)
MGF4916G - SUPER LOW NOISE InGaAs HEMT (Mitsubishi)
MGF4917D - (MGF4910D Series) Tape Carrier Super Low Noise InGaAs HEMT (Mitsubishi Electric)
MGF4918E - (MGF4910E Series) Super Low Noise InGaAs HEMT (Mitsubishi Electric)

Other Datasheets by Mitsubishi Electric Semiconductor

Published: Nov 1, 2012 |