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MGF4935AM Datasheet Super Low Noise Ingaas Hemt

Manufacturer: Mitsubishi Electric

Overview: May/2008 MITSUBISHI SEMICONDUTOR MGF4935AM SUPER LOW NOISE InGaAs HEMT (4pin flat lead.

General Description

The MGF4935AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers.

The 4pin flat lead package is small-thin size, and offers high cost performance.

Outline Drawing

Key Features

  • Low noise figure @ f=12GHz NFmin. = 0.45dB (Typ. ) High associated gain @ f=12GHz Gs = 12.0dB (Typ. ) Fig.1.

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MGF4935AM Distributor