Datasheet Summary
May/2008
MITSUBISHI SEMICONDUTOR
<GaAs FET>
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
DESCRIPTION
The MGF4935AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.
Outline Drawing
Features
Low noise figure @ f=12GHz NFmin. = 0.45dB (Typ.) High associated gain @ f=12GHz Gs = 12.0dB (Typ.)
Fig.1
MITSUBISHI Proprietary
APPLICATION
S to Ku band low noise amplifiers
Not to be reproduced or disclosed without permission by Mitsubishi Electric
QUALITY GRADE
REMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
ORDERING INFORMATION
Tape &...