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MGF4934BM - SUPER LOW NOISE InGaAs HEMT

Download the MGF4934BM datasheet PDF. This datasheet also covers the MGF4934AM variant, as both devices belong to the same super low noise ingaas hemt family and are provided as variant models within a single manufacturer datasheet.

General Description

The MGF4934BM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers.

The 4pin flat lead package is small-thin size, and offers high cost performance.

Key Features

  • Low noise figure @ f=12GHz NFmin. = 0.50dB (Typ. ) High associated gain @ f=12GHz Gs = 12.5dB (Typ. ) Fig.1.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MGF4934AM_MitsubishiElectricSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Mitsubishi Electric

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MGF4934AM SUPER LOW NOISE InGaAs HEMT
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
May/2008 MITSUBISHI SEMICONDUTOR MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) DESCRIPTION The MGF4934BM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance. Outline Drawing FEATURES Low noise figure @ f=12GHz NFmin. = 0.50dB (Typ.) High associated gain @ f=12GHz Gs = 12.5dB (Typ.) Fig.