MGFC42V7177
MGFC42V7177 is C band Internally Matched Power GaAs FET manufactured by Mitsubishi Electric.
<C band Internally Matched Power GaAs FET>
- 7.7GHz BAND / 16W
DESCRIPTION
The MGFC42V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1
- 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
Features
Crass A operation Internally matched to 50(ohm)
- High output power: P1dB = 16 W (typ.) @ P1dB
- High power gain: GLP = 8.0 dB (typ.)
- High power added efficiency: PAE = 30 % (typ.)
APPLICATIONS
- item 01 : 7.1
- 7.7GHz band power amplifier
- item 51 : 7.1
- 7.7GHz band digital radio munication
QUALITY
- IG
REMENDED BIAS CONDITIONS
- Vds = 10 V
- Ids = 4.5 A
- Rg = 25...
