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MGFC47B3538B

Manufacturer: Mitsubishi Electric

MGFC47B3538B datasheet by Mitsubishi Electric.

MGFC47B3538B datasheet preview

MGFC47B3538B Datasheet Details

Part number MGFC47B3538B
Datasheet MGFC47B3538B_MitsubishiElectricSemiconductor.pdf
File Size 202.16 KB
Manufacturer Mitsubishi Electric
Description C band Internally Matched Power GaAs FET
MGFC47B3538B page 2 MGFC47B3538B page 3

MGFC47B3538B Overview

The MGFC47B3538B is an internally impedance-matched GaAs power FET especially designed for use in 3.5 3.8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MGFC47B3538B Key Features

  • High output power: Po(SAT) = 50 W (typ.)
  • High power gain: GP = 10 dB (TPE.) @Po = 37dBm
  • Distortion: EVM = 2.0% (TPE.) @ Po = 37dBm
  • Vd = 12(V)
  • ID = 1.5 (A)
  • Rg = 10 ohm

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