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MGFC47B3538B - C band Internally Matched Power GaAs FET

Description

The MGFC47B3538B is an internally impedance-matched GaAs power FET especially designed for use in 3.5

3.8 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Features

  • Crass AB operation Internally matched to 50(ohm).
  • High output power: Po(SAT) = 50 W (typ. ).
  • High power gain: GP = 10 dB (TPE. ) @Po = 37dBm.
  • Distortion: EVM = 2.0% (TPE. ) @ Po = 37dBm Recommended Bias Condition.
  • Vd = 12(V).
  • ID = 1.5 (A).
  • Rg = 10 ohm GF-60 www. DataSheet. net/.

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Datasheet preview – MGFC47B3538B

Datasheet Details

Part number MGFC47B3538B
Manufacturer Mitsubishi Electric Semiconductor
File Size 202.16 KB
Description C band Internally Matched Power GaAs FET
Datasheet download datasheet MGFC47B3538B Datasheet
Additional preview pages of the MGFC47B3538B datasheet.

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Full PDF Text Transcription

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MGFC47B3538B 3.5 – 3.8GHz BAND / 50W DESCRIPTION The MGFC47B3538B is an internally impedance-matched GaAs power FET especially designed for use in 3.5 – 3.8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. OUTLINE DRAWING FEATURES Crass AB operation Internally matched to 50(ohm)  High output power: Po(SAT) = 50 W (typ.)  High power gain: GP = 10 dB (TPE.) @Po = 37dBm  Distortion: EVM = 2.0% (TPE.) @ Po = 37dBm Recommended Bias Condition  Vd = 12(V)  ID = 1.5 (A)  Rg = 10 ohm GF-60 www.DataSheet.net/ ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO MAXID PT *1 Tch Tstg *1 : Tc=25deg.C (Ta=25deg.C) Ratings -15 -10 12 115 175 -55 / +150 Unit V V A W deg.C deg.
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