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MGF4921AM Datasheet Super Low Noise Ingaas Hemt

Manufacturer: Mitsubishi Electric

Overview: < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package.

General Description

The MGF4921AM super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in L to C band amplifiers.

The 4pin flat lead package is small-thin size, and offers high cost performance.

Outline Drawing

Key Features

  • Low noise figure NFmin. = 0.35dB (Typ. ) @ f=2.4GHz NFmin. = 0.35dB (Typ. ) @ f=4GHz.
  • High associated gain Gs = 18.0dB (Typ. ) @ f=2.4GHz Gs = 13.0dB (Typ. ) @ f=4GHz Fig.1.

MGF4921AM Distributor