MGFC47B3538B
MGFC47B3538B is C band Internally Matched Power GaAs FET manufactured by Mitsubishi Electric.
<C band Internally Matched Power GaAs FET>
- 3.8GHz BAND / 50W
DESCRIPTION
The MGFC47B3538B is an internally impedance-matched GaAs power FET especially designed for use in 3.5
- 3.8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
OUTLINE DRAWING
Features
Crass AB operation Internally matched to 50(ohm)
- High output power: Po(SAT) = 50 W (typ.)
- High power gain: GP = 10 dB (TPE.) @Po = 37dBm
- Distortion: EVM = 2.0% (TPE.) @ Po = 37dBm
Remended Bias Condition
- Vd = 12(V)
- ID = 1.5 (A)
- Rg = 10 ohm
GF-60
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