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MT4435 - 30V P-Channel PowerTrench MOSFET

This page provides the datasheet information for the MT4435, a member of the MT4435_Mos 30V P-Channel PowerTrench MOSFET family.

Description

This P -Channel MOSFET is a rugged gate version of MOS-TECH Semiconductor’s advanced PowerTrench process.

25V).

Features

  • 8.8 A,.
  • 30 V RDS(ON) = 20 mΩ @ V GS =.
  • 10 V RDS(ON) = 35 mΩ @ V GS =.
  • 4.5 V M O S - T E C S HE M I C O N D U C T O R.
  • Low gate charge (17nC typical).
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.

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Datasheet preview – MT4435

Datasheet Details

Part number MT4435
Manufacturer Mos-Tech
File Size 436.16 KB
Description 30V P-Channel PowerTrench MOSFET
Datasheet download datasheet MT4435 Datasheet
Additional preview pages of the MT4435 datasheet.

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Full PDF Text Transcription

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MT4435 September 2008 MT4435 30V P-Channel PowerTrench® MOSFET General Description This P -Channel MOSFET is a rugged gate version of MOS-TECH Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features • –8.8 A, –30 V RDS(ON) = 20 mΩ @ V GS = –10 V RDS(ON) = 35 mΩ @ V GS = –4.
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