24N40E Description
Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTW24N40E/D TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time. In addition, this advanced TMOS E FET is designed to withstand high energy...