24N60FD2, 24N60FJD2 Datasheet - Silan Microelectronics

24N60FD2 600V DP MOS POWER TRANSISTOR

SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal beh.

24N60FD2 Features

* 24A, 600V, RDS(on)(typ.)=0.14@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability 2 1 3 1.Gate 2.Drain 3.Source 1 23 123 TO-220F-3L TO-220-3L 1 23 TO-220FJ-3L 123

24N60FJD2-SilanMicroelectronics.pdf

24N60FD2 Datasheet Preview — This datasheet PDF includes multiple part numbers: 24N60FD2, 24N60FJD2. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

24N60FD2, 24N60FJD2

Manufacturer:

Silan Microelectronics

File Size:

344.40 KB

Description:

600v dp mos power transistor.

Note:

This datasheet PDF includes multiple part numbers: 24N60FD2, 24N60FJD2.
Please refer to the document for exact specifications by model.

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24N60FD2 24N60FJD2 600V MOS POWER TRANSISTOR Silan Microelectronics

24N60FD2 Distributor