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Motorola Electronic Components Datasheet

2N3790 Datasheet

PNP silicon power transistors

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2N3789 thru 2N3792 (SILICON)
CASEll~.(TO-3)
~
PNP silicon power transistors for medium-speed
switching and amplifier applications. Complement
to NPN type 2N3713 thru 2N3716.
Collector connected to case
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Collector-BaSe Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Peak)
Base Current (Continuous)
Power Dissipation
Thermal Resistance
Junction Operating and
Storage Temperature Range
VCB
VCEO
VEB
IC
IC
IB
PD
iJJC
TJ, Tstg
2N3789
2N3791
60
60
7.. 0
10
10
4.0
150
1.17
2N3790
2N3792
80
80
7.0
10
10
4.0
150
1.17
-65 to +200
Unit
Volts
Volts
Volts
Amp
Amp
Amp
Watts
°C!W
°c
ELECTRICAL CHARACTERISTICS (Tc = 250 C unless otherwise noted)
Characteristic
Collector-Emitter Sustaining Voltage·
(IC = 1100 mAde, IB = 0)
llN3789, llN3791
llN3790, 2N3792
Symbol Min
VCEO(sus) 60
80
Max
--
Unit
Vdc
Collector-Emitter Cutoff Cl1rrent
(VCE = 60 Vdc, VBE = -1. 5 Vdc)
(VCE =80 Vdc, VBE = -1. 5 Vdc)
(VCE = 60 Vdc, VBE = -1. 5 Vdc, TC = 150°C)
(VCE = 80 Vdc, VBE = -1.5 Vdc, TC = 150°C)
llN3789, llN3791
llN3790, llN37911
2N3789, llN3791
2N3790, llN37911
Emitter-Base Cutoff Current
(VEB = 7 Vdc)
DC Current Gain·
(IC = 1 Adc, VCE = II Vdc)
(Ic = 3 Adc, VCE '" II Vdc)
llN3789, llN3790
llN3791, llN3792
llN3789, llN3790
llN3791, llN37911
Collector-Emitter Saturation Voltage·
(IC = 4 Adc, IB =0.4 Adc)
(IC = 5 Adc. IB =-0.5 Adc)
2N3789, 2N3790
llN3791, llN37911
Base-Emitter Saturation Voltage.
(IC = 4 Adc, IB = 0.4 Adc)
(IC = 5 Adc, IB = 0.5 Adc)
Current Gain - Bandwidth Product
(VCE = 10 Vdc, IC = O. 5 Adc f =1.0 MHz)
llN3789, llN3790
2N3791, llN37911
ICEX
- 1.0
- 1.0
- 5.0
- 5.0
lEBO -
hFE
115
50
15
30
-VCE(sat)
-
-VBE(sat)
-
5.0
90
150
--
1.0
1.0
ll.O
1.5
-fT
. 4.0
mAde
mAdc
-
Vdc
Vdc
MHz
·Sweep Test: 1/2 Sine wave cycle @ 60 Hz •
2-614


Motorola Electronic Components Datasheet

2N3790 Datasheet

PNP silicon power transistors

No Preview Available !

2N3789 thru 2N3792 (continued)
1.0 -....
~ ..............
"O.7 f\:,
. . . . r-.
TYPICAL SWITCHING TIMES AND TEST CIRCUIT
i 6.7ms
Ums :r-:-1
+9V
j.
w o.5
;~=
ill
"~ .L,.~
I'\"."r-,.
[\..1',
'r-.
If -O.3
Ve-e1-,,310-VleIl1
Te - 25°C
""-~
r'..
r' -~
--;,- ......
\.
~
..... r-
O.2 I I
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0
Ie, COLLECTOR CURRENT lAMP)
VALUES SHOWN FOR
ic-5A,),,- -1,,-0.5A
f = 150 cps, OIlTY CYCLE = 2%
-30 V
61l
4W
POWER-TEMPERATURE DERATING CURVE
160
u; 140
~
~ 120
z
0
100
~
~ 80
~ 60
~ 40
,f 20
............. t--.
..............
..............
..............
...............
...............
...............
25 50 75 100 125 150 175 200
Te, CASE TEMPERATURE 1°C)
Safe area curves are indicated. Both limits are applicable and must be observed.
10
~
! 1.0
~
&l 0.7
::::l
8 0.5
Ji
0.3
0.2
ACTIVE-REGION SAFE OPERATING AREAS
2N3789,2N3791
2N3790,2N3792
Det.Sms
500!,s -
n -"\. \4 2501's -
i.>.,.\ 1\ \ \ . ~
"\ 1\\ ySO!,'
1m. k\\ \ \
~ \V~.
5001" -
" t\L"-. ~ ~ ~
DCt.Sm. -'-.. "\
.~
2501's -
2<56!'. -
fI'\. \. 1\ \ \'
0 hl~\~1m.
"\. \.
"""\\.\
'-..\'
~
0.1
o 10 20
30 40
50 60
70
10 20 30 40 50 60 70 80 90
VeE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
The Safe Operating Area Curves indicate IC - VCE limits below which the device will not go into secondary
breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid
causing a collector-emitter short. (Duty cycle of the excursion make no significant change in these safe
areas.) To insure operation below the maximum TJ, the power-temperature derating curve must be ob-
served for both steady state and pulse power conditions.
2-615


Part Number 2N3790
Description PNP silicon power transistors
Maker Motorola
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2N3790 Datasheet PDF






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