2N3790 Datasheet | Motorola Semiconductor

2N3789 thru 2N3792 (SILICON) CASEll~. (TO-3) ~ PNP silicon power transistors for medium-speed switching and amplifier applications. plement to NPN type 2N3713 thru 2N3716. Collector connected to case MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Collector-Ba Se Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Peak) Base Current (Continuous) Power Dissipation Thermal Resistance Junction Operating and Storage Temperature Range VCB VCEO VEB IC IC IB PD i JJC TJ, Tstg 2N3789 2N3791 60 60 7.. 0 10 10 4.0 150 1.17 2N3790 2N3792 80 80 7.0 10 10 4.0 150 1.17 -65 to +200 Unit Volts Volts Volts Amp Amp Amp Watts °C!W °c ELECTRICAL CHARACTERISTICS (Tc = 250 C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Sustaining Voltage- (IC = 1100 m Ade, IB = 0) - ll N3789, ll N3791 VCEO(sus) 60 - Vdc ll N3790, 2N3792 - Collector-Emitter Cutoff Cl1rrent (VCE = 60 Vdc, VBE = -1. 5 Vdc) (VCE =80 Vdc, VBE = -1. 5 Vdc) (VCE = 60 Vdc, VBE = -1. 5 Vdc, TC = 150°C) (VCE = 80 Vdc, VBE = -1.5 Vdc, TC = 150°C) ll N3789, ll N3791 ll N3790, ll N37911 2N3789, ll N3791 2N3790, ll...