| Part number | 2N3790 |
|---|---|
| Datasheet | 2N3790-InchangeSemiconductor.pdf |
| File Size | 184.36 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
|
|
·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for medium-speed switching and amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2N3790 | PNP POWER TRANSISTORS | Central Semiconductor |
 |
2N3790 | Silicon PNP Transistor | Toshiba |
 |
2N3790 | PNP silicon power transistors | Motorola |
 |
2N3790 | EPITAXIAL-BASE TRANSISTORS | Comset Semiconductor |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2N3791 | Silicon PNP Power Transistors |
| 2N3713 | Silicon NPN Power Transistor |
| 2N3714 | Silicon NPN Power Transistor |
| 2N3740 | Silicon PNP Power Transistors |
| 2N3741 | Silicon PNP Power Transistors |
| 2N3741R | Silicon PNP Power Transistors |
| 2N3766 | Silicon NPN Power Transistors |
| 2N3767 | Silicon NPN Power Transistors |
| 2N3773 | Silicon NPN Power Transistors |
| 2N3773L | Silicon NPN Power Transistors |
