Datasheet Details
| Part number | 2N3790 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.36 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2N3790-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2N3790 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.36 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2N3790-InchangeSemiconductor.pdf |
|
|
|
·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for medium-speed switching and amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature -65~200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.17 ℃/W 2N3790 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=-200mA;
Compare 2N3790 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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