2N4260
2N4261
2N4261 JAN, JTX AVAILABLE
CASE 20, STYLE 10
TO-72
SWITCHING TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (a TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
vCEO
vCBO
v EBO
"C
PD
TJ' Tst g
Value
15
15
4.5
30
200
1.14
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA 25°C unless otherwise noted.
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
dC = 10 mAdc, Ie = 0)
Collector-Base Breakdown Voltage
(IC = 10 ,uAdc, Ie = 0)
Emitter-Base Breakdown Voltage
(IE = 10 ,uAdc, lc = 0)
Collector Cutoff Current
(VCE = 10 Vdc, V B E(off) = 2.0 Vdc)
(Vqe = 10 Vdc, V BE ( ff) = 2.0 Vdc, TA = 150°C)
(VCE = 10 Vdc, VEB(on) - 0-4 Vdc)
Base Cutoff Current
(VCE = 10 Vdc, VBE(off) = 2.0 Vdc)
ON CHARACTERISTICS
DC Current Gain
dC = 1.0 mAdc, Vce = 1.0 Vdc)
dC = 10 mAdc, Vce = 10 Vdc)
dp = 30 mAdc, Vqe = 2.0 Vdc)
Collector-Emitter Saturation Voltage
dC = 10 mAdc, Bl = 0.1 mAdc)
dC = 10 mAdc, Ib = 1.0 mAdc)
Base-Emitter On Voltage
dC = 1.0 mAdc, Vce = 10 Vdc)
dC = 10 mAdc, Vce = 1-0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC = 5.0 mAdc, VC e = 4.0 Vdc, f = 100 MHz)
2N4260
2N4261
dC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 4,Q vdc, El = 0, f = 1 00 kHz)
Input Capacitance
(VBE = 0-5 Vdc, CI = 0, f = 100 kHz)
—Current Gain High Frequency
dC =" 10 mAdc, Vce = 10 Vdc, f = 100 MHz)
2N4260
2NI4261
2N4260
2N4261
Symbol
v (BR)CEO
v (BR)CBO
v (BR)EBO
'CEX
"BL
Max
0.005
5.0
0.05
0.005
Unit
Vdc
Vdc
Vdc
MAdc
,uAdc
"FE
v CE(sat)
v BE(c
25
30
20
^obo
^-ibo
1200
1500
1600
2000
16
20
150
0.15
0.35
0.8
1.0
Vdc
MHz
2.5 PF
2.5 PF
4-164
