2N697
2N697 is GENERAL PURPOSE TRANSISTOR manufactured by Motorola Semiconductor.
CASE 79, STYLE 1
TO-39 (TO-205AD)
GENERAL PURPOSE TRANSISTOR
NPN SILICON
Refer to 2N2218 for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
=Total Device Dissipation (a TA 25°C
Derate above 25°C Total Device Dissipation (a Tq = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol VCER v CBO Vebo PD
Pd
TJ< Tstg
Value 40 60 5.0
0.6 4.0 2.0 13.3
- 65 to + 200
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltaged) dc = 100 m Adc, Rbe = 10 ohms)
Collector-Base Breakdown Voltage d C = 100 /x Adc, l£ = 0)
Emitter-Base Breakdown Voltage (IE = 100 ^Adc, lc = 0)
Collector Cutoff Current
(V C B = 30 Vdc, Ie = 0)
(VC B = 30 Vdc, El = 0, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain(1) d C = 150 m Adc, Vce = 10 Vdc)
Collector-Emitter Saturation Voltaged) d C = 150 m Adc, Ib = 15 m Adc)
Base-Emitter Saturation Voltaged) d C...
