Datasheet Summary
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA
Order this document by BDX33B/D
Darlington plementary Silicon Power Transistors
. . . designed for general purpose and low speed switching applications.
- High DC Current Gain
- hFE = 2500 (typ.) at IC = 4.0
- Collector- Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.)
- BDX33B, 34B VCEO(sus) = 100 Vdc (min.)
- BDX33C, 34C
- Low Collector- Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc
- BDX33B, 33C/34B, 34C
- Monolithic Construction with Build- In Base- Emitter Shunt resistors
- TO- 220AB pact Package MAXIMUM RATINGS
BDX33B BDX33C
- BDX34B BDX34C
- Motorola Preferred Device
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