| Part number | BFQ19 |
|---|---|
| Datasheet | BFQ19-Motorola.pdf |
| File Size | 32.23 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | RF TRANSISTOR |
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Max 1.0 8.0 150 125 Unit Watt mW/°C °C °C/W (TA = 25°C unless otherwise noted) r Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage dC = 10 mA) Collector-Base Breakdown Voltage dC = 10 ^A) Emitter-Base Breakdown Voltage =E(l 10 fjA) Collector Cutoff Current (VCB = 10 V) Emitter Cutoff Current (VEB = 1.0 V) ON CHARACTERISTICS DC Curren.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BFQ19 | NPN 5 GHz wideband transistor | NXP |
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BFQ193 | NPN Silicon RF Transistor | Siemens Semiconductor Group |
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BFQ19S | NPN Silicon RF Transistor | Siemens Semiconductor Group |
 |
BFQ19S | Low Noise Silicon Bipolar RF Transistor | Infineon Technologies AG |
 |
BFQ19S | NPN Silicon RF Transistor | Kexin |
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| BFQ17 | RF TRANSISTOR |
| BFQ18A | RFTRANSISTOR |
