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INS829, INS830 INS831
MBRS831,H, HI
® MOTOROLA
De!o'>igneJ'!o'> Data Sheet
HOT CARRIER POWER RECTIFIERS
· .. employing the Schottky Barrier principle in a large area metalto-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free-wheeling diodes, and polarity-protection diodes.
SCHOTTKY BARRIER RECTIFIERS
25 AMPERE 20,30,40 VOLTS
• Extremely Low vF
• Low Power Loss/High Efficiency
• Low Stored Charge, Majority • High Surge Capacity
Carrier Conduction
• TX Version Available
II
Designer's Data for "Worst Case" Conditions
The Designers Data sheets permit the design of most circuits entirely from the information presented.
MBR5831H Datasheet
