MBR5831H1 Description
INS829, INS830 INS831 MBRS831,H, HI ® MOTOROLA De!o'>igneJ'!o'> Data Sheet HOT CARRIER POWER RECTIFIERS · .. employing the Schottky Barrier principle in a large area metalto-silicon power diode. State-of-the-art geometry.
MBR5831H1 Key Features
- Extremely Low vF
- Low Power Loss/High Efficiency
- Low Stored Charge, Majority
- High Surge Capacity
- TX Version Available
- representing boundaries on device characteristics
- are given to facilitate "worst case" design
- Ambient Temperature Rated VR (de), PF(AV) = 0 R8JA = 3.5°C/W
- 11.4115
- D 8.35 0.2&0