Datasheet4U Logo Datasheet4U.com

MBRF20200CT - SWITCHMODE Schottky Power Rectifirer

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRF20200CT/D SWITCHMODE™ Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode.

Key Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low.
  • voltage, high.
  • frequency switching power supplies, free wheeling diodes and polarity protection diodes.
  • Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop Matched Dual Die Construction High Junction Temperature Capability High dv/dt Capability.