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MBRP30035L - SWITCHMODE Schottky Power Rectifier(POWERTAP III Package)

Key Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes.
  • Very Low Forward Voltage Drop.
  • Highly Stable Oxide Passivated Junction.
  • Guardring for Stress Protection.
  • High dv/dt Capability Mechanical Characteristics:.
  • Dual Die Construction.
  • Case: Epoxy, Molded with Plated Copper Heatsink Base.
  • Weigh.

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Part Number Description
MBRP30035 SWITCHMODE Schottky Power Rectifier(POWERTAP III Package)
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Full PDF Text Transcription (Reference)

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRP30035L/D Product Preview SWITCHMODE™ Schottky Power Rectifier POWERTAP III Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes.