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Motorola Electronic Components Datasheet

MCM6208C Datasheet

64K x 4 Fast Static RAM

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
64K x 4 Fast Static RAM
The MCM6208C is fabricated using Motorola’s high–performance silicon–gate
CMOS technology. Static design eliminates the need for external clocks or timing
strobes, while CMOS circuitry reduces power consumption and provides for
greater reliability.
This device meets JEDEC standards for functionality and pinout, and is avail-
able in plastic dual–in–line and plastic small–outline J–leaded packages.
Single 5 V ± 10% Power Supply
Fully Static — No Clock or Timing Strobes Necessary
Fast Access Times: 12, 15, 20, 25, and 35 ns
Equal Address and Chip Enable Access Times
Low Power Operation: 135 –165 mA Maximum AC
Fully TTL Compatible — Three–State Output
BLOCK DIAGRAM
A1
A2
A3
A4 MEMORY ARRAY
A6
ROW
DECODER
256 ROWS x
64 x 4 COLUMNS
A12
A13
A14
VCC
VSS
DQ0
INPUT
DQ1 DATA
DQ2 CONTROL
COLUMN I/O
COLUMN DECODER
DQ3
A0 A5 A7 A8 A9 A10 A11 A15
E
W
Order this document
by MCM6208C/D
MCM6208C
P PACKAGE
300 MIL PLASTIC
CASE 724A–01
J PACKAGE
300 MIL SOJ
CASE 810A–02
PIN ASSIGNMENT
A0 1
A1 2
A2 3
A3 4
A4 5
A5 6
A6 7
A7 8
A8 9
A9 10
E 11
VSS 12
24 VCC
23 A15
22 A14
21 A13
20 A12
19 A11
18 A10
17 DQ0
16 DQ1
15 DQ2
14 DQ3
13 W
PIN NAMES
A0 – A15 . . . . . . . . . . . . . Address Input
DQ0 – DQ3 . . . Data Input/Data Output
W . . . . . . . . . . . . . . . . . . . . Write Enable
E . . . . . . . . . . . . . . . . . . . . . . Chip Enable
VCC . . . . . . . . . . . Power Supply (+ 5 V)
VSS . . . . . . . . . . . . . . . . . . . . . . . Ground
NC . . . . . . . . . . . . . . . . . No Connection
REV 4
6/95
M© OMoTtoOroRla,OInLc.A19F94AST SRAM
MCM6208C
1


Motorola Electronic Components Datasheet

MCM6208C Datasheet

64K x 4 Fast Static RAM

No Preview Available !

TRUTH TABLE (X = Don’t Care)
EW
Mode
H X Not Selected
LH
Read
LL
Write
VCC Current
ISB1, ISB2
ICCA
ICCA
Output
High–Z
Dout
High–Z
Cycle
Read Cycle
Write Cycle
ABSOLUTE MAXIMUM RATINGS (See Note)
Rating
Symbol
Value
Unit
Power Supply Voltage
VCC
– 0.5 to + 7.0
V
Voltage Relative to VSS For Any Pin
Except VCC
Vin, Vout – 0.5 to VCC + 0.5 V
Output Current
Iout ± 20 mA
Power Dissipation
PD 1.0 W
Temperature Under Bias
Tbias
– 10 to + 85
°C
Operating Temperature
TA
0 to + 70
°C
Storage Temperature — Plastic
Tstg
– 55 to + 125
°C
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maxi-
mum rated voltages to this high–impedance
circuit.
This CMOS memory circuit has been
designed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established. The circuit is in a test
socket or mounted on a printed circuit board
and transverse air flow of at least 500 linear
feet per minute is maintained.
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V ± 10%, TA = 0 to 70°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Supply Voltage (Operating Voltage Range)
Input High Voltage
VCC
VIH
Input Low Voltage
VIL
* VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width 20 ns)
** VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2.0 V ac (pulse width 20 ns)
DC CHARACTERISTICS
Parameter
Input Leakage Current (All Inputs, Vin = 0 to VCC)
Output Leakage Current (E1 = VIH, Vout = 0 to VCC)
Standby Current (E VCC – 0.2 V*, Vin VSS + 0.2 V, or VCC – 0.2 V,
VCC = Max, f = 0 MHz)
Output Low Voltage (IOL = 8.0 mA)
Output High Voltage (IOH = – 4.0 mA)
Min
4.5
2.2
– 0.5*
Symbol
Ilkg(I)
Ilkg(O)
ISB2
VOL
VOH
Typ Max Unit
5.0 5.5 V
— VCC + 0.3** V
— 0.8 V
Min Max Unit
± 1 µA
± 1 µA
— 20 mA
— 0.4 V
2.4 — V
POWER SUPPLY CURRENTS
Parameter
AC Supply Current (Iout = 0 mA, VCC = Max, f = fmax)
Standby Current (E = VIH, VCC = Max, f = fmax)
Symbol – 12 – 15 – 20 – 25 – 35 Unit
ICCA
ISB1
165 155 145 135 135 mA
55 50 45 40 40 mA
MCM6208C
2
MOTOROLA FAST SRAM


Part Number MCM6208C
Description 64K x 4 Fast Static RAM
Maker Motorola
Total Page 8 Pages
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