MCM69R738A - 4M Late Write 2.5 V I/O
PBGA Pin Locations 4K 4L (a) 6K, 7K, 6L, 7L, 6M, 6N, 7N, 6P, 7P (b) 6D, 7D, 6E, 7E, 6F, 6G, 7G, 6H, 7H (c) 1D, 2D, 1E, 2E, 2F, 1G, 2G, 1H, 2H (d) 1K, 2K, 1L, 2L, 2M, 1N, 2N, 1P, 2P 4F 2A, 3A, 5A, 6A, 3B, 5B, 2C, 3C, 5C, 6C, 4N, 4P, 2R, 6R, 3T, 4T, 5T 5L, 5G, 3G, 3L (a), (b), (c), (d) 4E 4M 4U 3U 5U
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCM69R738A/D Advance Information 4M Late Write 2.5 V I/O The MCM69R738A/820A is a 4 megabit synchronous late write fast static RAM designed to provide high performance in secondary cache and ATM switch, Telecom, and other high speed memory applications.
The MCM69R820A organized as 256K words by 18 bits, and the MCM69R738A organized as 128K words by 36 bits wide are fabricated in Motorola’s high performance silicon gate BiCMOS techn
MCM69R738A Features
* ISB1 ISB2 Min 3.15 2.3
* Typical
* 5
* 390 450 180 170 150 Typical
* 6
* 360 420 180 170 150 Typical
* 7
* 330 390 180 170 150 Typical
* 8
* 320 370 18
