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Motorola Electronic Components Datasheet

MCR16M Datasheet

Silicon Controlled Rectifiers

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half–wave ac control applications, such as motor
controls, heating controls, and power supplies; or wherever half–wave, silicon
gate–controlled devices are needed.
Blocking Voltage to 800 Volts
On-State Current Rating of 16 Amperes RMS
High Surge Current Capability — 160 Amperes
Industry Standard TO–220AB Package for Ease of Design
Glass Passivated Junctions for Reliability and Uniformity
Order this document
by MCR16/D
MCR16
SERIES*
*Motorola preferred devices
SCRs
16 AMPERES RMS
400 thru 800
VOLTS
A
K
A
G
CASE 221A–06
(TO-220AB)
Style 3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Peak Repetitive Off-State Voltage (1)
Peak Repetitive Reverse Voltage
(TJ = –40 to 125°C)
MCR16D
MCR16M
MCR16N
VDRM
VRRM
Volts
400
600
800
On-State RMS Current
(All Conduction Angles)
IT(RMS)
16 A
Peak Non-repetitive Surge Current
(One Half Cycle, 60 Hz, TJ = 125°C)
Circuit Fusing Consideration (t = 8.3 ms)
ITSM
I2t
160 A
106 A2sec
Peak Gate Power (Pulse Width 1.0 µs, TC = 80°C)
Average Gate Power (t = 8.3 ms, TC = 80°C)
Peak Gate Current (Pulse Width 1.0 µs, TC = 80°C)
Operating Junction Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
PGM
PG(AV)
IGM
TJ
Tstg
5.0
0.5
2.0
– 40 to +125
– 40 to +150
Watts
Watts
A
°C
°C
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
RθJC
RθJA
1.5 °C/W
62.5
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds
TL
260 °C
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Thyristor Device Data
© Motorola, Inc. 1995
1


Motorola Electronic Components Datasheet

MCR16M Datasheet

Silicon Controlled Rectifiers

No Preview Available !

MCR16 SERIES
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Peak Forward Blocking Current
Peak Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
ON CHARACTERISTICS
TJ = 25°C
TJ = 125°C
IDRM
IRRM
— 0.01 mA
— 2.0
Peak On-State Voltage* (ITM = 32 A)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 )
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 )
Hold Current (Anode Voltage =12 V)
DYNAMIC CHARACTERISTICS
VTM
— 1.7 Volts
IGT 2.0 8.0 20 mA
VGT 0.5 0.65 1.0 Volts
IH 4.0 25 40 mA
Critical Rate of Rise of Off–State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 25°C)
*Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
dv/dt
50
200
— V/µs
125
120
115
110
105
100
95
90
0
a
a = Conduction
Angle
a=30° 60° 90° 120° 180°
dc
2 4 6 8 10 12 14
IT(AV), AVERAGE ON–STATE CURRENT (AMP)
Figure 1. Average Current Derating
16
22
20
18
16 a
14 a = Conduction
180°
120°
90°
Angle
12
60°
dc
10 a=30°
8
6
4
2
0
0 2 4 6 8 10 12 14 16
IT(AV), AVERAGE ON–STATE CURRENT (AMP)
Figure 2. Maximum On–State Power Dissipation
100
Typical @ TJ=25 °C
10
Maximum @ TJ=125 °C
1 Maximum @ TJ=25 °C
1
0.1
+ @ZqJC(t) RqJC(t) r(t)
0.1
0.5
1 1.5 2 2.5 3
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)
Figure 3. On–State Characteristics
0.01
3.5 0.1
1 10 100 1000
t, TIME (ms)
Figure 4. Transient Thermal Response
@1 104
2 Motorola Thyristor Device Data


Part Number MCR16M
Description Silicon Controlled Rectifiers
Maker Motorola
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MCR16M Datasheet PDF





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