MFR9180 Datasheet Rf Power Field Effect Transistors

Manufacturer: Motorola Semiconductor (now NXP Semiconductors)

Overview: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9180/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for.

Datasheet Details

Part number	MFR9180
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	342.87 KB
Description	RF Power Field Effect Transistors
Datasheet	MFR9180_Motorola.pdf

Key Features

F9180S 7 Zo = 5 Ω f = 895 MHz Zsource Zload f = 895 MHz f = 865 MHz f = 865 MHz VDD = 26 V, IDQ = 2 × 700 mA, Pout = 170 W PEP f MHz 865 880 895 Zsource Ω 2.95 + j0.00 2.48 + j0.67 2.44 + j1.18 Zload Ω 3.83 + j1.02 3.55 + j1.38 3.34+ j1.51 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to.

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Key Features

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