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MHVIC2114R2 - RF LDMOS Wideband Integrated Power Amplifier

Description

1 µF Tantalum Chip Capacitors 0.01 µF Chip Capacitors 6.8 pF Chip Capacitors (ACCU - P) 1.5 pF Chip Capacitor (ACCU - P) 2.2 pF Chip Capacitors (ACCU - P) 1.0 pF Chip Capacitor (ACCU - P) 330 µF Electrolytic Capacitors 1 kW Chip Resistors (0805) Part Number TAJA105K035R 0805C103K5RACTR AVX08051J6R8B

Features

  • MHz 2110 2140 2170 Zin Zin Ω 57.9 - j12.1 50.6 - j18.9 42.3 - j21.1 Zload Ω 1.1 + j2.7 1.1 + j3.4 1.2 + j3.7 = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Z in Z load Figure 14. Series Equivalent Source and Load Impedance.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MHVIC2114R2/D The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifier The MHVIC2114R2 wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip matching design makes it usable from 1600 to 2600 MHz. The linearity performances cover all modulation formats for cellular applications: CDMA and W - CDMA. The device is in a PFP - 16 flat pack package that provides excellent thermal performance through a solderable backside contact.
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