MHVIC2115R2 Datasheet | Motorola Semiconductor

.. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MHVIC2115R2/D The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifier The MHVIC2115R2 wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip matching design makes it usable from 1600 to 2600 MHz. The linearity performances cover W - CDMA modulation formats. Final Application Typical W - CDMA Performance: - 45 d Bc ACPR, 2110 - 2170 MHz, VDD = 27 Volts, IDQ1 = 56 m A, IDQ2 = 61 m A, IDQ3 = 117 m A, Pout = 34 d Bm, 3GPP Test Model 1, Measured in a 1.0 MHz BW @ 4 MHz offset, 64 DTCH Power Gain - 30 d B PAE = 16% Driver Application Typical W - CDMA Performance: - 53 d Bc ACPR, 2110 - 2170 MHz, VDD = 26 Volts, IDQ1 = 96 m A, IDQ2 = 204 m A, IDQ3 = 111 m A, Pout = 23 d Bm, 3GPP Test Model 1, Measured in a 3.84 MHz BW @ 5 MHz offset, 64 DTCH Power Gain - 34 d B - Gain Flatness = 0.3 d B from 2110 - 2170 MHz - P1d B = 15 Watts, Gain Flatness = 0.2 d B from 2110 - 2170 MHz - Capable of Handling 3:1 VSWR, @ 26 Vdc, 2140 MHz, 15 Watts CW Output Power - Characterized with Series Equivalent Large - Signal Impedance Parameters - On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) - Integrated Temperature pensation with Enable/Disable Function - Integrated ESD Protection - In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel. MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ 2170 MHz, 26 V, 23/34 d Bm W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER Freescale Semiconductor, Inc... CASE 978 - 03 PFP -...