MHVIC915R2 Datasheet PDF - Motorola 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier Specs

MHVIC915R2 - 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier

Datasheet Summary

Description

4.7 pF High Q Capacitors (0603) 47 pF NPO Capacitors (0805) 1 µF X7R Chip Capacitors (1214) 10 µF, 50 V Electrolytic Capacitor 0.01 µF X7R Chip Capacitors (0805) 8.2 pF NPO Chip Capacitor (0805) 1 kW Chip Resistors (0603) 100 kW Chip Resistors (0603) Value, P/N or DWG ATC600S4R7CW GRM40 001C

Features

band Performance 33 32 G ps , POWER GAIN (dB) 31 30 29 28 27 26 25 5 10 15 20 3 mW IDQ1 = 50 mA, IDQ2 = 140 mA f = 880 MHz 25 30 35 Pin = 1 mW 2 mW 32.5 32 G ps , POWER GAIN (dB) 31.5 31 30.5 30 29.5 29 28.5 28 5 10 15 20 0.07 mW Pin = 0.275 mW 0.14 mW IDQ1 = 50 mA, IDQ2 = 140 mA f = 880 MHz 25 30 35 VDD, SUPPLY.

Datasheet Details

Part number	MHVIC915R2
Manufacturer	Motorola
File Size	652.38 KB
Description	746-960 MHz RF LDMOS Wideband Integrated Power Amplifier
Datasheet	MHVIC915R2 Datasheet
Additional preview pages of the MHVIC915R2 datasheet.

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Full PDF Text Transcription

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MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MHVIC915R2/D The RF Line 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier The MHVIC915R2 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest high voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi–stage structure. Its wideband On–Chip integral matching circuitry makes it usable from 746 to 960 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, and CDMA. The device is packaged in a PFP–16 flat pack package that provides excellent thermal performance through a solderable backside contact.

Published: Apr 27, 2005 |