MHVIC2114R2 Datasheet | Motorola Semiconductor

.. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MHVIC2114R2/D The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifier The MHVIC2114R2 wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip matching design makes it usable from 1600 to 2600 MHz. The linearity performances cover all modulation formats for cellular applications: CDMA and W - CDMA. The device is in a PFP - 16 flat pack package that provides excellent thermal performance through a solderable backside contact. Final Application - Typical Two - Tone Performance: VDD = 27 Volts, IDQ1 = 95 m A, IDQ2 = 204 m A, IDQ3 = 111 m A, Pout = 15 Watts PEP, Full Frequency Band Power Gain - 32 d B IMD - - 30 d Bc Driver Application - Typical Single - Channel W - CDMA Performance: VDD = 27 Volts, IDQ1 = 96 m A, IDQ2 = 204 m A, IDQ3 = 111 m A, Pout = 23 d Bm, 2110 - 2170 MHz, 3GPP Test Model 1, Measured in a 3.84 MHz BW @ 5 MHz Offset, 64 DTCH, Peak/Avg. = 8.5 d B @ 0.01% Probability on CCDF. Power Gain - 32 d B ACPR - - 58 d Bc - P1d B = 14 Watts, Gain Flatness = 0.2 d B from 2110 to 2170 MHz - Capable of Handling 3:1 VSWR, @ 27 Vdc, 2140 MHz, 15 Watts CW Output Power - Characterized with Series Equivalent Large - Signal Impedance Parameters and mon Source Scattering Parameters - On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) - Integrated Temperature pensation with Enable/Disable Function - Integrated ESD Protection - In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel. 2100 MHz, 27 V, 23 d Bm SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER Freescale Semiconductor, Inc... CASE 978 - 03 PFP - 16 PIN CONNECTIONS VGS3 VGS2 VGS1 Quiescent Current Temperature pensation N.C. VGS3 VGS2 VDS3/RFout VGS1 RFin RFin VDS1...