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MJ21195 - (MJ21195 / MJ21196) Silicon Power Transistors

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ21195/D MJ21195 Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. • Total Harmonic Distortion Characterized • High DC Current Gain – hFE = 25 Min @ IC = 8 Adc • Excellent Gain Linearity • High SOA: 3 A, 80 V, 1 Second PNP MJ21196 *Motorola Preferred Device NPN * * 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 250 WATTS CASE 1–07 TO–204AA (TO–3) MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector–Emitter Voltage – 1.
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