MJ21195G - 250 Watt Silicon Type Metal Package Power Transistor

Thinki Semiconductor

Datasheet Details

Part number	MJ21195G
Manufacturer	Thinki Semiconductor
File Size	335.03 KB
Description	250 Watt Silicon Type Metal Package Power Transistor
Datasheet	MJ21195G Datasheet

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Other Datasheets by Thinki Semiconductor

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MJ21193G	Metal Package Power Transistor
MJ21194G	Metal Package Power Transistor
MJ21196G	250 Watt Silicon Type Metal Package Power Transistor

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MJ21195G/MJ21196G ® Pb Free Plating Product MJ21195G/MJ21196G Pb 250 Watt Silicon Type Metal Package Power Transistor The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. • Total Harmonic Distortion Characterized • High DC Current Gain – hFE = 25 Min @ IC = 8 Adc • Excellent Gain Linearity • High SOA: 3 A, 80 V, 1 Second SCHEMATIC PNP CASE 3 NPN CASE 3 CASE 1–07 TO–204AA (TO–3) 1 BASE 1 BASE EMITTER 2 EMITTER 2 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector–Emitter Voltage – 1.