MJ21195G - Silicon Power Transistors

onsemi

Key Features

Total Harmonic Distortion Characterized.
High DC Current Gain.
Excellent Gain Linearity.
High SOA.
These Devices are Pb.
Free and are RoHS Compliant.

MJ21195G silicon power transistors by onsemi - Datasheet Preview

Datasheet Details

Part number	MJ21195G
Manufacturer	onsemi
File Size	228.76 KB
Description	Silicon Power Transistors
Datasheet	MJ21195G Datasheet

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Full PDF Text Transcription (Reference)

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Silicon Power Transistors MJ21195G - PNP MJ21196G - NPN The MJ21195G and MJ21196G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features  Total Harmonic Distortion Characterized  High DC Current Gain  Excellent Gain Linearity  High SOA  These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.5V Collector Current − Continuous Collector Current − Peak (Note 1) Base Current − Continuous Total Device Dissipation @ TC = 25_C Derate above 25_C Symbol VCEO VCBO VEBO VCEX IC ICM IB PD Value 250 400 5 400 16 30 5 250 1.