Datasheet Details
| Part number | MJ21195 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 124.17 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | MJ21195-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor Silicon PNP Power Transistor.
| Part number | MJ21195 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 124.17 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | MJ21195-InchangeSemiconductor.pdf |
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·Excellent Gain linearity ·High DC Current Gain- : hFE= 25(min) @IC = -8A ·Total Harmonic Distortion characterized.
·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·plement to the NPN MJ21196 APPLICATIONS ·Designed for high power audio output, disk head positioners and other linear applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -16 A IB Base Current -5 A PD Total Power Dissipation@TC=25℃ 250 W Tj Junction Temperature -65~200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 0.7 UNIT ℃/W Product Specification MJ21195 isc Website：.iscsemi.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJ21195 | Complementary Silicon Power Transistors | ON |
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MJ21195 | (MJ21195 / MJ21196) Silicon Power Transistors | Motorola |
 |
MJ21195G | 250 Watt Silicon Type Metal Package Power Transistor | Thinki Semiconductor |
 |
MJ21195G | Silicon Power Transistors | ON Semiconductor |
| Part Number | Description |
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