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MJ21196 - (MJ21195 / MJ21196) Silicon Power Transistors

Download the MJ21196 datasheet PDF. This datasheet also covers the MJ21195 variant, as both devices belong to the same (mj21195 / mj21196) silicon power transistors family and are provided as variant models within a single manufacturer datasheet.

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📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MJ21195_Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ21195/D MJ21195 Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. • Total Harmonic Distortion Characterized • High DC Current Gain – hFE = 25 Min @ IC = 8 Adc • Excellent Gain Linearity • High SOA: 3 A, 80 V, 1 Second PNP MJ21196 *Motorola Preferred Device NPN * * 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 250 WATTS CASE 1–07 TO–204AA (TO–3) MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector–Emitter Voltage – 1.