Datasheet4U Logo Datasheet4U.com

MJ21193 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: Silicon PNP Power Transistor.

General Description

·Excellent Safe Operating Area ·DC Current Gain- : hFE= 25-75@IC = -8A,VCE=-5V ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.4 V(Max)@ IC = -8A ·plement to the NPN MJ21194 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio output, disk head positioners and other linear applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -16 A IB Base Current -5 A PD Total Power Dissipation@TC=25℃ 250 W Tj Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.7 ℃/W MJ21193 isc Website:.iscsemi.

1 isc & iscsemi is registered trademark Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -8A;

MJ21193 Distributor