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Silicon PNP Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-
: hFE= 25-75@IC = -8A,VCE=-5V ·Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.4 V(Max)@ IC = -8A ·Complement to the NPN MJ21194 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high power audio output, disk head positioners
and other linear applications.