MJ21193 Overview
Description
With TO-3 package - Complement to type MJ21194 - Excellent gain linearity APPLICATIONS - Designed for high power audio output,disk head positioners and linear applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector MAX -400 -250 -5 -16 -30 -5 250 -65~200 -65~200 UNIT V V V A A A W SYMBOL Rth j-C PARAMETER SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN MJ21193 SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-100mA ;IB=0 -250 V VCE(sat)-1 VCE(sat)-2 VBE(ON) Collector-emitter saturation voltage IC=-8A; IB=-0.8A -1.4 V Collector-emitter saturation voltage IC=-16A; IB=-3.2A -4.0 V Base-emitter on voltage IC=-8A ; VCE=-5V -2.2 V ICEX Collector cut-off current VCE=-250V; VBE(off)=-1.5V VCE=-200V; IB=0 -100 µA ICEO Collector cut-off current -100 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -100 µA hFE-1 DC current gain IC=-8A ; VCE=-5V 25 75 hFE-2 DC current gain IC=-16A ; VCE=-5V 8 fT Transition frequency IC=-1A ; VCE=-10V,f=1MHz 4 MHz COB Collector output capacitance Second breakdown current with base forward biased f=1MHz;VCB=-10V,IE=0 VCE=-50V;t=1s(non-repetitive) VCE=-80V;t=1s(non-repetitive) -5.0 -2.5 500 pF Is/b A 2 SavantIC Semiconductor Product Specification Silicon.
