| Part Number | MJ21193 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Excellent Safe Operating Area ·DC Current Gain- : hFE= 25-75@IC = -8A,VCE=-5V ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.4 V(Max)@ IC = -8A ·Complement to the NPN MJ21194 ·Minimum Lot-to-L. CTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -16A; IB= -3.2A VBE(on) . |
MJ21193 Datasheet and Specifications PDF
The MJ21193 is a PNP Transistor.
| Part Number | MJ21193 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3 package ·Complement to type MJ21194 ·Excellent gain linearity APPLICATIONS ·Designed for high power audio output,disk head positioners and linear applications PINNING(see Fig.2) PIN 1 2 3 B. =25 unless otherwise specified PARAMETER CONDITIONS MIN MJ21193 SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-100mA ;IB=0 -250 V VCE(sat)-1 VCE(sat)-2 VBE(ON) Collector-emitter saturation voltage IC=-8A; IB=-0.8A -1.4 V Collector-emitter . |
| Part Number | MJ21193 Datasheet |
|---|---|
| Description | 16 ampere complementary silicon power transistors |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ21193/D
Silicon Power Transistors
The MJ21193 and MJ21194 utilize Perforated Emitter technology and are specifically designed for high.
Vdc Vdc Vdc Adc Adc Watts W/°C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.7 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector *Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) . |
| Part Number | MJ21193 Datasheet |
|---|---|
| Description | Silicon Power Transistors |
| Manufacturer | onsemi |
| Overview |
MJ21193 - PNP MJ21194 - NPN
Silicon Power Transistors
The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head po.
* Total Harmonic Distortion Characterized * High DC Current Gain * Excellent Gain Linearity * High SOA * These Devices are Pb *Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector *Emitter Voltage Collector *Base Voltage Emitter *Base Voltage Collector *Emitter Voltage. |