Datasheet Details
| Part number | MJ21194 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.09 KB |
| Description | NPN Transistor |
| Datasheet | MJ21194-INCHANGE.pdf |
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Overview: Silicon NPN Power Transistor MJ21194.
| Part number | MJ21194 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.09 KB |
| Description | NPN Transistor |
| Datasheet | MJ21194-INCHANGE.pdf |
|
|
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·Excellent Safe Operating Area ·DC Current Gain- : hFE= 25-75@IC = 8A,VCE= 5V ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.4 V(Max)@ IC = 8A ·plement to the PNP MJ21193 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio output, disk head positioners and other linear applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 16 A IB Base Current 5 A PD Total Power Dissipation@TC=25℃ 250 W Tj Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.7 ℃/W isc Website：.iscsemi.
1 isc & iscsemi is registered trademark Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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MJ21194 | Silicon Power Transistors | ON |
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MJ21194 | Silicon NPN Power Transistors | Savantic |
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MJ21194G | Metal Package Power Transistor | Thinki Semiconductor |
| Part Number | Description |
|---|---|
| MJ21193 | PNP Transistor |
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| MJ2501 | PNP Transistor |
| MJ2955 | PNP Transistor |
| MJ2955A | PNP Transistor |