MJ21194 Overview
Description
With TO-3 package - Complement to type MJ21193 - Excellent gain linearity APPLICATIONS - Designed for high power audio output,disk head positioners and linear applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector MAX 400 250 5 16 30 5 250 -65~200 -65~200 UNIT V V V A A A W SYMBOL Rth j-C PARAMETER SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN MJ21194 SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 250 V VCE(sat)-1 VCE(sat)-2 VBE(ON) Collector-emitter saturation voltage IC=8A; IB=0.8A 1.4 V Collector-emitter saturation voltage IC=16A; IB=3.2A 4.0 V Base-emitter on voltage IC=8A ; VCE=5V 2.2 V ICEX Collector cut-off current VCE=250V; VBE(off)=1.5V VCE=200V; IB=0 100 µA ICEO Collector cut-off current 100 µA IEBO Emitter cut-off current VEB=5V; IC=0 100 µA hFE-1 DC current gain IC=8A ; VCE=5V 25 75 hFE-2 DC current gain IC=16A ; VCE=5V 8 fT Transition frequency IC=1A ; VCE=10V,f=1MHz 4 MHz COB Collector output capacitance Second breakdown current with base forward biased f=1MHz;VCB=10V,IE=0 VCE=50V;t=1s(non-repetitive) VCE=80V;t=1s(non-repetitive) 5.0 2.5 500 pF Is/b A 2 SavantIC Semiconductor Product Specification Silicon NPN Power Tr.
