MJ21194 Datasheet and Specifications PDF

The MJ21194 is a Silicon NPN Power Transistors.

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Part NumberMJ21194 Datasheet
ManufacturerSavantic
Overview ·With TO-3 package ·Complement to type MJ21193 ·Excellent gain linearity APPLICATIONS ·Designed for high power audio output,disk head positioners and linear applications PINNING(see Fig.2) PIN 1 2 3 B. RACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN MJ21194 SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 250 V VCE(sat)-1 VCE(sat)-2 VBE(ON) Collector-emitter saturation voltage IC=8A; IB=0.8A 1.4 V Collector-emitter saturation.
Part NumberMJ21194 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Excellent Safe Operating Area ·DC Current Gain- : hFE= 25-75@IC = 8A,VCE= 5V ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.4 V(Max)@ IC = 8A ·Complement to the PNP MJ21193 ·Minimum Lot-to-Lot . CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 16A; IB= 3.2A VBE(on) Base-Emitter .
Part NumberMJ21194 Datasheet
DescriptionSilicon Power Transistors
Manufactureronsemi
Overview MJ21193 - PNP MJ21194 - NPN Silicon Power Transistors The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head po.
* Total Harmonic Distortion Characterized
* High DC Current Gain
* Excellent Gain Linearity
* High SOA
* These Devices are Pb
*Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector
*Emitter Voltage Collector
*Base Voltage Emitter
*Base Voltage Collector
*Emitter Voltage.