| Part Number | MJ21196 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
MJ21195 − PNP MJ21196 − NPN
Preferred Devices
Silicon Power Transistors
The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power.
* * * * * Total Harmonic Distortion Characterized High DC Current Gain * hFE = 25 Min @ IC = 8 Adc Excellent Gain Linearity High SOA: 3 A, 80 V, 1 Sec Pb *Free Packages are Available* 16 AMPERES COMPLEMENTARY SILICONPOWER TRANSISTORS 250 VOLTS, 250 WATTS MAXIMUM RATINGS Rating C. |
MJ21196 Datasheet and Specifications PDF
The MJ21196 is a Complementary Silicon Power Transistors.
| Part Number | MJ21196 Datasheet |
|---|---|
| Description | (MJ21195 / MJ21196) Silicon Power Transistors |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ21195/D
MJ21195 Silicon Power Transistors
The MJ21195 and MJ21196 utilize Perforated Emitter technology and are sp.
to +200
āā
Unit Vdc Vdc Vdc Vdc Adc Adc Watts W/°C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.7 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C ± 5°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector *Emitter Sustaining Volt. |