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MJ21196G - Silicon Power Transistors

Download the MJ21196G datasheet PDF. This datasheet also covers the MJ21195G variant, as both devices belong to the same silicon power transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Total Harmonic Distortion Characterized.
  • High DC Current Gain.
  • Excellent Gain Linearity.
  • High SOA.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MJ21195G-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MJ21196G
Manufacturer onsemi
File Size 228.76 KB
Description Silicon Power Transistors
Datasheet download datasheet MJ21196G Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Power Transistors MJ21195G - PNP MJ21196G - NPN The MJ21195G and MJ21196G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features  Total Harmonic Distortion Characterized  High DC Current Gain  Excellent Gain Linearity  High SOA  These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.5V Collector Current − Continuous Collector Current − Peak (Note 1) Base Current − Continuous Total Device Dissipation @ TC = 25_C Derate above 25_C Symbol VCEO VCBO VEBO VCEX IC ICM IB PD Value 250 400 5 400 16 30 5 250 1.