| Part Number | MJ21196G Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
Silicon Power Transistors
MJ21195G - PNP MJ21196G - NPN
The MJ21195G and MJ21196G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners.
* Total Harmonic Distortion Characterized * High DC Current Gain * Excellent Gain Linearity * High SOA * These Devices are Pb *Free and are RoHS Compliant* MAXIMUM RATINGS Rating Collector *Emitter Voltage Collector *Base Voltage Emitter *Base Voltage Collector *Emitter Voltage * 1.5V Collector Current. |
MJ21196G Datasheet and Specifications PDF
The MJ21196G is a Silicon Power Transistors.
| Part Number | MJ21196G Datasheet |
|---|---|
| Description | 250 Watt Silicon Type Metal Package Power Transistor |
| Manufacturer | Thinki Semiconductor |
| Overview |
MJ21195G/MJ21196G
®
Pb Free Plating Product
MJ21195G/MJ21196G
Pb
250 Watt Silicon Type Metal Package Power Transistor
The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specif.
oted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector *Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCE = 200 Vdc, IB = 0) (1) Pulse Test: Pulse Width = 5 µs, Duty Cycle ≤ 10%. VCEO(sus) ICEO Min 250 * Symbol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg Value 250 4. |