MJ21196 - Complementary Silicon Power Transistors

Key Features

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Total Harmonic Distortion Characterized High DC Current Gain.
hFE = 25 Min @ IC = 8 Adc Excellent Gain Linearity High SOA: 3 A, 80 V, 1 Sec Pb.
Free Packages are Available.
16.

MJ21196 complementary silicon power transistors by ON - Datasheet Preview

Datasheet Details

Part number	MJ21196
Manufacturer	ON
File Size	109.13 KB
Description	Complementary Silicon Power Transistors
Datasheet	MJ21196 Datasheet

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com MJ21195 − PNP MJ21196 − NPN Preferred Devices Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features http://onsemi.com • • • • • Total Harmonic Distortion Characterized High DC Current Gain − hFE = 25 Min @ IC = 8 Adc Excellent Gain Linearity High SOA: 3 A, 80 V, 1 Sec Pb−Free Packages are Available* 16 AMPERES COMPLEMENTARY SILICONPOWER TRANSISTORS 250 VOLTS, 250 WATTS MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.5V Collector Current − Continuous − Peak (Note 1) Symbol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg Value 250 400 5 400 16 30 5 250 1.