MJ21196 Description
MJ21195 − PNP MJ21196 − NPN Preferred Devices Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
MJ21196 Key Features
- Total Harmonic Distortion Characterized High DC Current Gain
- hFE = 25 Min @ IC = 8 Adc Excellent Gain Linearity High SOA: 3 A, 80 V, 1 Sec Pb-Free Packages are Available
- 1.5V Collector Current
- Continuous
- Continuous Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range
- Rev. 4